FQD1N60CTM

TO-252, 100% avalanche tested, Improved dv/dt capability, 600V N-Channel MOSFET

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Price:: US $0.12~0.15 / piece [Get Latest Price]

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PartNumber:: FQD1N60CTM

Brand:: Fairchild Semiconductor - Fairchild | Pack: TO | D/C: 08+

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Products Upload time: 2011-07-15

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Product Summary

The FQD1N60CTM is a 600V N-Channel MOSFET. It is produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. The FQD1N60CTM is well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

Parametrics

FQD1N60CTM absolute maximum ratings: (1)Drain-Source Voltage:600 V; (2)Drain Current: Continuous (TC = 25℃):1A, Continuous (TC = 100℃):0.6 A; (3)Drain Current:4A; (4)Gate-Source Voltage:± 30 V; (5)Single Pulsed Avalanche Energy:33 mJ; (6)Avalanche Current:1A; (7)Repetitive Avalanche Energy:2.8 mJ; (8)Peak Diode Recovery dv/dt:4.5 V/ns; (9)Power Dissipation (TA = 25℃):2.5 W; (10)Power Dissipation (TC = 25℃):28 W, Derate above 25℃:0.22 W/℃; (11)Operating and Storage Temperature Range:-55℃ to +150℃; (12)Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds: 300℃.

Features

FQD1N60CTM features: (1)1A, 600V, RDS(on) = 11.5Ω @VGS = 10 V; (2)Low gate charge (typical 4.8nC); (3)Low Crss (typical 3.5 pF); (4)Fast switching; (5)100% avalanche tested; (6)Improved dv/dt capability; (7)RoHS Compliant.