(China (Mainland))
Product Summary
The MB85RC64PNF-G-JNERE1 is a FRAM (Ferroelectric Random Access Memory) Stand-Alone chip in a configuration of 8,192 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. The MB85RC64PNF-G-JNERE1 adopts the two-wire serial interface. Unlike SRAM, the MB85RC64PNF-G-JNERE1 is able to retain data without using a data backup battery. The read/write endurance of the nonvolatile memory cells used for the device has improved to be at least 1010 cycles, significantly out performing Flash memory and E2PROM in the number. The MB85RC64PNF-G-JNERE1 does not need a polling sequence after writing to the memory such as the case of Flash memory nor E2PROM.
Parametrics
MB85RC64PNF-G-JNERE1 absolute maximum ratings: (1)Power supply voltage, VCC: -0.5 to +4.0 V; (2)Input pin voltage, VIN: -0.5 to VCC + 0.5 ( ≤ 4.0) V; (3)Output pin voltage, VOUT: -0.5 to VCC + 0.5 ( ≤ 4.0) V; (4)Ambient temperature, TA: -40 to +85℃; (5)Storage temperature, Tstg: -40 to +125℃.
Features
MB85RC64PNF-G-JNERE1 features: (1)Bit configuration: 8,192 words × 8 bits; (2)Operating power supply voltage: 2.7 V to 3.6 V; (3)Operating frequency: 400 kHz (Max); (4)Two-wire serial interface: I2C-bus specification ver. 2.1 compliant, supports Standard-mode/Fast-mode. Fully controllable by two ports: serial clock (SCL) and serial data (SDA); (5)Operating temperature range: -40 to +85℃; (6)Data retention: 10 years ( + 55 ℃); (7)Read/write endurance : 1010 times; (8)Package: Plastic / SOP, 8-pin (FPT-8P-M02); (9)Low power consumption: Operating current 0.15 mA (Max: @400 kHz), Standby current 5 μA (Typ).
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MB8504S064CA-102L |
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MB8504S064CA-103 |
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MB8504S064CA-103L |
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MB8504S064CE-100 |
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MB8504S064CE-100L |
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