(China (Mainland))
Product Summary
The BC817-40 is a NPN general purpose transistor. It is in a SOT23 plastic package. The device is designed for general purpose switching and amplification.
Parametrics
BC817-40 absolute maximum ratings: (1)VCBO collector-base voltage: max=50 V; (2)VCEO collector-emitter voltage: max=45 V; (3)VEBO emitter-base voltage: max=5 V; (4)IC collector current (DC): max=500 mA; (5)ICM peak collector current: max=1 A; (6)IBM peak base current: max=200 mA; (7)Ptot total power dissipation Tamb: max=250 mW; (8)Tstg storage temperature: min=-65℃, max=+150 ℃; (9)Tj junction temperature: max=150 ℃; (10)Tamb operating ambient temperature: min=-65℃, max=+150 ℃.
Features
BC817-40 features: (1)High current (max. 500 mA); (2)Low voltage (max. 45 V).
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
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 BC817-40 |
Taiwan Semiconductor |
Transistors Bipolar (BJT) Transistor 300mW |
Data Sheet |
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BC817-40 /T3 |
NXP Semiconductors |
Transistors Bipolar (BJT) TRANS GP TAPE-13 |
Data Sheet |
Negotiable |
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BC817-40,235 |
NXP Semiconductors |
Transistors Bipolar (BJT) TRANS GP TAPE-13 |
Data Sheet |
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BC817-40-7 |
Diodes Inc. |
Transistors Bipolar (BJT) NPN BIPOLAR |
Data Sheet |
Negotiable |
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BC817-40-7-F |
Diodes Inc. |
Transistors Bipolar (BJT) NPN BIPOLAR |
Data Sheet |
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BC817-40E6327 |
Infineon Technologies |
Transistors Bipolar (BJT) NPN 45 V 500 mA |
Data Sheet |
Negotiable |
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BC817-40LT1 |
ON Semiconductor |
Transistors Bipolar (BJT) 500mA 50V NPN |
Data Sheet |
Negotiable |
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BC817-40LT3G |
ON Semiconductor |
Transistors Bipolar (BJT) 500mA 50V NPN |
Data Sheet |
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