(China (Mainland))
Product Summary
The FM24V05-G is a 512Kbit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes like a RAM. The FM24V05-G provides reliable data retention for 10 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories. The FM24V05-G performs write operations at bus speed. No write delays are incurred. The next bus cycle may commence immediately without the need for data polling. In addition, the product offers write endurance orders of magnitude higher than EEPROM.
Parametrics
FM24V05-G absolute maximum ratings: (1)Power Supply Voltage with respect to VSS:-1.0V to +4.5V ; (2)Voltage on any pin with respect to VSS:-1.0V to +4.5V and VIN < VDD+1.0V; (3)Storage Temperature:-55℃ to +125℃; (4)Lead Temperature (Soldering, 10 seconds):300℃; (5)Package Moisture Sensitivity Level:MSL-1.
Features
FM24V05-G features: (1)Organized as 65,536 x 8 bits ; (2)High Endurance 100 Trillion (1014) Read/Writes ; (3)10 year Data Retention ; (4)NoDelay Writes ; (5)Advanced High-Reliability Ferroelectric Process ; (6)Up to 3.4 MHz maximum bus frequency ; (7)Direct hardware replacement for EEPROM ; (8)Supports legacy timing for 100 kHz & 400 kHz ; (9)Device ID reads out Manufacturer ID & Part ID ; (10)Low Voltage Operation 2.0V to 3.6V ; (11)Active Current < 150 μA (typ. @ 100KHz) ; (12)90 μA Standby Current (typ.) ; (13)5 μA Sleep Mode Current (typ.) ; (14)Industrial Temperature -40℃ to +85℃; (15)8-pin Green/RoHS SOIC Package.
Diagrams
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 FM24V05-G |
Ramtron |
F-RAM 512K (64KX8) 3.3V F-RAM |
Data Sheet |
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FM24V05-GTR |
Ramtron |
F-RAM 512K (64KX8) 3.3V F-RAM |
Data Sheet |
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