Product Summary

The STP8NK80ZFP is a Zener-protected SuperMESH Power MOSFET. It is obtained through an extreme optimization of ST’s well established strip-based PowerMESH layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. The application of the STP8NK80ZFP is Switching applications.

Parametrics

STP8NK80ZFP absolute maximum ratings: (1)Drain-source voltage (VGS = 0):800 V; (2)Gate- source voltage:± 30 V; (3)Drain current (continuous) at TC = 25℃:6.2A; (4)Drain current (continuous) at TC = 100℃:3.9A; (5)Drain current (pulsed):24.8A; (6)Total dissipation at TC = 25℃:30 W; (7)Derating factor:0.24 W/℃; (8)Gate source ESD(HBM-C=100pF, R=1.5KΩ):4000 V; (9)Peak diode recovery voltage slope:4.5 V/ns; (10)Insulation withstand voltage (RMS) from all three leads to external heat sink(t=1s; Tc= 25℃):2500 V; (11)Max operating Junction temperature:-55℃ to 150℃; (12)Storage temperature: -55℃ to 150℃.

Features

STP8NK80ZFP features: (1)Extremely high dv/dt capability; (2)100% avalanche tested; (3)Gate charge minimized; (4)Very low intrinsic capacitances ; (5)Very good manufacturing repeatability.

Diagrams

STP8NK80ZFP test circuit

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