Product Summary

The FHX06LGT is a High Electron Mobility Transistor(HEMT) intended for general purpose, low noise and high gain amplifiers in the 2-18GHz frequency range.The FHX06LGT is packaged in cost effective, low parasitic, hermetically sealed metal-ceramic package for high volume telecommunication, TVRO, VSAT or other low noise applications.

Parametrics

FHX06LGT absolute maximum ratings: (1)Drain-Source Voltage, VDS: 3.5V; (2)Gate-Source Voltage, VGS: -3.0V; (3)Total Power Dissipation, Pt: 180mW; (4)Storage Temperature, Tstg: -65 to +175℃; (5)Channel Temperature, Tch: 175℃.

Features

FHX06LGT features: (1)Low Noise Figure: 0.75dB (Typ.)@f=12GHz (FHX04); (2)High Associated Gain: 10.5dB (Typ.)@f=12GHz; (3)Lg ≤ 0.25μm, Wg = 200μm; (4)Gold Gate Metallization for High Reliability; (5)Cost Effective Ceramic Microstrip (SMT) Package; (6)Tape and Reel Packaging Available.

Diagrams

FHX06LGT Metal-Ceramic Hermetic Package