(China (Mainland))
Product Summary
The FM25V05-GTR is a 512-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes like a RAM. The FM25V05-GTR provides reliable data retention for 10 years while eliminating the complexities, overhead, and system level reliability problems caused by Serial Flash and other nonvolatile memories. Unlike Serial Flash, the FM25V05-GTR performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after it has been transferred to the device.
Parametrics
FM25V05-GTR absolute maximum ratings: (1)Power Supply Voltage with respect to VSS:-1.0V to +4.5V ; (2)Voltage on any pin with respect to VSS:-1.0V to +4.5V and VIN < VDD+1.0V ; (3)Storage Temperature:-55℃ to +125℃ ; (4)Lead Temperature (Soldering, 10 seconds):260℃ ; (5)Electrostatic Discharge Voltage:Human Body Model (AEC-Q100-002 Rev. E):4kV, Charged Device Model (AEC-Q100-011 Rev. B):1.25kV, Machine Model (AEC-Q100-003 Rev. E):200V; (6)Package Moisture Sensitivity Level:MSL-1 .
Features
FM25V05-GTR features: (1)Organized as 65,536 x 8 bits ; (2)High Endurance 100 Trillion (1014) Read/Writes ; (3)10 Year Data Retention ; (4)NoDelay Writes ; (5)Advanced High-Reliability Ferroelectric Process ; (6)Up to 40 MHz Frequency ; (7)Direct Hardware Replacement for Serial Flash ; (8)SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1) ; (9)Hardware Protection ; (10)Software Protection ; (11)Device ID reads out Manufacturer ID & Part ID ; (12)Low Voltage, Low Power ; (13)Low Voltage Operation 2.0V to 3.6V ; (14)90 μA Standby Current (typ.) ; (15)5 μA Sleep Mode Current (typ.) ; (16)Industrial Temperature -40℃ to +85℃; (17)8-pin “Green”/RoHS SOIC Package.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 FM25V05-GTR |
Ramtron |
F-RAM 512K (64KX8) 3.3V F-RAM |
Data Sheet |
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