SST39VF1601-70-4C-EKE

Product Summary

The SST39VF1601-70-4C-EKE is a CMOS Multi-Purpose Flash Plus (MPF+) manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39VF1601-70-4C-EKE writes (Program or Erase) with a 2.7-3.6V power supply. The device conforms to JEDEC standard pinouts for x16 memories. The SST39VF1601-70-4C-EKE is suited for applications that require convenient and economical updating of program, configuration, or data memory. For all system applications, it significantly improves performance and reliability, while lowering power consumption.

Parametrics

SST39VF1601-70-4C-EKE absolute maximum ratings: (1)Temperature Under Bias:-55℃ to +125℃; (2)Storage Temperature:-65℃ to +150℃; (3)D. C. Voltage on Any Pin to Ground Potential: -0.5V to VDD+0.5V; (4)Transient Voltage (<20 ns) on Any Pin to Ground Potential:-2.0V to VDD+2.0V; (5)Voltage on A9 Pin to Ground Potential:-0.5V to 13.2V; (6)Package Power Dissipation Capability (Ta = 25℃):1.0W; (7)Surface Mount Lead Soldering Temperature (3 Seconds):240℃; (8)Output Short Circuit Current:50 mA.

Features

SST39VF1601-70-4C-EKE features: (1)Single Voltage Read and Write Operations:2.7-3.6V ; (2)Superior Reliability:Endurance: 100,000 Cycles (Typical), Greater than 100 years Data Retention; (3)Low Power Consumption (typical values at 5 MHz): Active Current: 9 mA (typical), Standby Current: 3 μA (typical), Auto Low Power Mode: 3 μA (typical); (4)Hardware Block-Protection/WP# Input Pin: Bottom Block-Protection (bottom 32 KWord); (5)Sector-Erase Capability:Uniform 2 KWord sectors; (6)Block-Erase Capability:Uniform 32 KWord blocks; (7)Chip-Erase Capability; (8)Erase-Suspend/Erase-Resume Capabilities; (9)Hardware Reset Pin (RST#); (10)Security-ID Feature:SST: 128 bits; User: 128 bits; (11)Fast Read Access Time::70 ns, 90 ns; (12)Latched Address and Data; (13)Fast Erase and Word-Program: Sector-Erase Time: 18 ms (typical), Block-Erase Time: 18 ms (typical), Chip-Erase Time: 40 ms(typical), Word-Program Time: 7 μs (typical); (14)Automatic Write Timing:Internal VPP Generation; (15)End-of-Write Detection: Toggle Bits, Data# Polling; (16)CMOS I/O Compatibility ; (17)JEDEC Standard: Flash EEPROM Pinouts and command sets.

Diagrams