(China (Mainland))
Product Summary
The FM24CL16-G2TR is a 16-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for over 10 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories. Unlike serial EEPROMs, the FM24CL16-G2TR performs write operations at bus speed. No write delays are incurred. The next bus cycle may commence immediately without the need for data polling. In addition, the product offers unlimited write endurance, orders of magnitude more endurance than EEPROM. Also, FRAM exhibits much lower power during writes than EEPROM since write operations do not require an internally elevated power supply voltage for write circuits.
Parametrics
FM24CL16-G2TR absolute maximum ratings: (1)VDD Power Supply Voltage with respect to VSS: -1.0V to +5.0V; (2)VIN Voltage on any pin with respect to VSS: -1.0V to +5.0V; (3)and VIN < VDD+1.0V; (4)TSTG Storage Temperature: -55℃ to + 125℃; (5)TLEAD Lead temperature (Soldering, 10 seconds): 300℃.
Features
FM24CL16-G2TR features: (1)16K bit Ferroelectric Nonvolatile RAM; (2)Fast Two-wire Serial Interface; (3)Low Power Operation; (4)Industry Standard Configuration.
Diagrams
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 FM240 |
Rectron |
Diodes (General Purpose, Power, Switching) GP Si Rectifier SMB,2A,40V |
Data Sheet |
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FM240A |
Rectron |
Diodes (General Purpose, Power, Switching) GP Si Rectifier SMB,2A,40V |
Data Sheet |
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FM240A-W |
Rectron |
Schottky (Diodes & Rectifiers) 2A 40V Schottky |
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FM240L |
Rectron |
Schottky (Diodes & Rectifiers) SM Schot Bar Rect SMB,2A,40V |
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FM240-L |
Other |
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Data Sheet |
Negotiable |
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FM240-LN |
Other |
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Data Sheet |
Negotiable |
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