Product Summary

The SI9934BDY-T1-GE3 is a dual P-channel 2.5-V (G-S) mosfet.

Parametrics

SI9934BDY-T1-GE3 absolute maximum ratings: (1)drain-source voltage: -12V; (2)gate-source voltage: ±8V; (3)continuous drain current: -6.4 to -4.8A; (4)pulsed drain current: -20A; (5)continuous source current: -1.7 to -0.9A; (6)maximum power dissipation: 2.0 to 1.1W; (7)operating junction and storage temperature range: -55 to 150°C.

Features

SI9934BDY-T1-GE3 features: TrenchFET@power MOSFET.

Diagrams

SI9934BDY-T1-GE3 pin connection

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
SI9934BDY-T1-GE3
SI9934BDY-T1-GE3
Vishay/Siliconix
MOSFET 12V 6.4A 2.0W 35mohm @ 4.5V
Data Sheet
0-1: $0.90
1-10: $0.71
10-50: $0.67
50-100: $0.63
Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
Si9910
Si9910
Other

Data Sheet
Negotiable 
SI9910DJ
SI9910DJ
Vishay/Siliconix
Power Driver ICs MOSFET Driver
Data Sheet
0-210: $1.13
210-250: $0.90
250-500: $0.80
500-1000: $0.69
SI9910DJ-E3
SI9910DJ-E3
Vishay/Siliconix
Power Driver ICs MOSFET Driver
Data Sheet
0-1: $1.62
1-10: $1.24
10-100: $1.13
100-250: $0.90
SI9910DY
SI9910DY
Vishay/Siliconix
Power Driver ICs MOSFET Driver
Data Sheet
0-410: $0.73
Si9910DY-E1-E3
Si9910DY-E1-E3
Other

Data Sheet
Negotiable 
SI9910DY-E3
SI9910DY-E3
Vishay/Siliconix
Power Driver ICs DRVR 1A Sngl. Non-Inv Hi Side
Data Sheet
0-1: $1.62
1-10: $1.24
10-100: $1.13
100-250: $0.90