Product Summary
The SI9934BDY-T1-GE3 is a dual P-channel 2.5-V (G-S) mosfet.
Parametrics
SI9934BDY-T1-GE3 absolute maximum ratings: (1)drain-source voltage: -12V; (2)gate-source voltage: ±8V; (3)continuous drain current: -6.4 to -4.8A; (4)pulsed drain current: -20A; (5)continuous source current: -1.7 to -0.9A; (6)maximum power dissipation: 2.0 to 1.1W; (7)operating junction and storage temperature range: -55 to 150°C.
Features
SI9934BDY-T1-GE3 features: TrenchFET@power MOSFET.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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SI9934BDY-T1-GE3 |
Vishay/Siliconix |
MOSFET 12V 6.4A 2.0W 35mohm @ 4.5V |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
Si9910 |
Other |
Data Sheet |
Negotiable |
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SI9910DJ |
Vishay/Siliconix |
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Data Sheet |
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SI9910DJ-E3 |
Vishay/Siliconix |
Power Driver ICs MOSFET Driver |
Data Sheet |
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SI9910DY |
Vishay/Siliconix |
Power Driver ICs MOSFET Driver |
Data Sheet |
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Si9910DY-E1-E3 |
Other |
Data Sheet |
Negotiable |
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SI9910DY-E3 |
Vishay/Siliconix |
Power Driver ICs DRVR 1A Sngl. Non-Inv Hi Side |
Data Sheet |
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