Product Summary

The MB85RC16PNF-G-JNERE1 is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 2,048 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC16PNF-G-JNERE1 is able to retain data without using a data backup battery. The memory cells used in the MB85RC16PNF-G-JNERE1 have at least 1010 Read/Write operation endurance per bit, which is a significant improvement over the number of read and write operations supported by other nonvolatile memory products. The MB85RC16PNF-G-JNERE1 can provide writing in one byte units because the long writing time is not required unlike Flash memory and E2PROM. Therefore, the writing completion waiting sequence like a write busy state is not required.

Parametrics

MB85RC16PNF-G-JNERE1 absolute maximum ratings: (1)Power supply voltage VDD: -0.5 + 4.0 V; (2)Input voltage VIN: -0.5 VDD + 0.5 ( ≤ 4.0) V; (3)Output voltage VOUT: -0.5 VDD + 0.5 ( ≤ 4.0) V; (4)Ambient temperature TA: -40 + 85 ℃; (5)Storage temperature Tstg: -40 + 125 ℃.

Features

MB85RC16PNF-G-JNERE1 features: (1)Bit configuration : 2,048 words x 8 bits; (2)Operating power supply voltage : 2.7 V to 3.6 V; (3)Operating frequency : 1 MHz (Max); (4)Two-wire serial interface : Fully controllable by two ports: serial clock (SCL) and serial data (SDA).; (5)Operating temperature range : -40 ℃ to + 85 ℃; (6)Data retention : 10 years ( + 75 ℃); (7)Read/Write endurance : 1010 times; (8)Package : Plastic / SOP, 8-pin (FPT-8P-M02); (9)Low power consumption : Operating current 0.1mA (Max: @1 MHz), Standby current 0.1 μA (Typ).

Diagrams

MB85RC16PNF-G-JNERE1 block diagram

MB8504S064CA-102
MB8504S064CA-102

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MB8504S064CA-102L
MB8504S064CA-102L

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MB8504S064CA-103
MB8504S064CA-103

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MB8504S064CA-103L
MB8504S064CA-103L

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MB8504S064CE-100
MB8504S064CE-100

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Negotiable 
MB8504S064CE-100L
MB8504S064CE-100L

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Data Sheet

Negotiable