Product Summary

The IRF540NPBF is a HEXFET power mosfet. The IRF540NPBF from international rectifier utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Parametrics

IRF540NPBF absolute maximum ratings: (1)Continuous Drain Current: 23A; (2)Power Dissipation: 130 W; (3)Gate-to-Source Voltage: ± 20 V; (4)Repetitive Avalanche Energy: 13 mJ; (5)Avalanche Current: 16 A; (6)Operating Junction and Storage Temperature Range: -55 to + 175°C.

Features

IRF540NPBF features: (1)Advanced Process Technology; (2)Ultra Low On-Resistance; (3)Dynamic dv/dt Rating; (4)175°C Operating Temperature; (5)Fast Switching; (6)Fully Avalanche Rated; (7)Lead-Free.

Diagrams

IRF540NPBF pin connection

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
IRF540NPBF
IRF540NPBF

International Rectifier

MOSFET MOSFT 100V 33A 44mOhm 47.3nC

Data Sheet

0-1: $1.41
1-25: $0.91
25-100: $0.66
100-250: $0.62
Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
IRF500
IRF500

Other


Data Sheet

Negotiable 
IRF510
IRF510

Vishay/Siliconix

MOSFET N-Chan 100V 5.6 Amp

Data Sheet

0-730: $0.85
730-1000: $0.82
1000-2000: $0.79
2000-5000: $0.78
IRF510, SiHF510
IRF510, SiHF510

Other


Data Sheet

Negotiable 
IRF510_R4941
IRF510_R4941

Fairchild Semiconductor

MOSFET TO-220AB N-Ch Power

Data Sheet

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IRF510A
IRF510A

Fairchild Semiconductor

MOSFET 100V .2 OHM 33W

Data Sheet

Negotiable 
IRF510A_Q
IRF510A_Q

Fairchild Semiconductor

MOSFET 100V .2 Ohm 33W

Data Sheet

Negotiable