(China (Mainland))
Product Summary
The FM24L256-G is a 256-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes like a RAM. The FM24L256-G provides reliable data retention for 45 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories. The FM24L256-G provides substantial benefits to users of serial EEPROM, yet these benefits are available in a hardware drop-in replacement. The device is available in industry standard 8-pin SOIC package using a familiar two-wire protocol.
Parametrics
FM24L256-G absolute maximum ratings: (1)Power Supply Voltage with respect to VSS:-1.0V to +5.0V ; (2)Voltage on any signal pin with respect to VSS:-1.0V to +5.0V and VIN < VDD+1.0V; (3)Storage temperature:-55℃ to + 125℃; (4)Lead temperature (Soldering, 10 seconds):300℃; (5)Electrostatic Discharge Voltage:Human Body Model (JEDEC Std JESD22-A114-B):4kV, Machine Model (JEDEC Std JESD22-A115-A): 300V; (6)Package Moisture Sensitivity Level:MSL-1.
Features
FM24L256-G features: (1)Organized as 32,768 x 8 bits ; (2)Unlimited Read/Write Cycles ; (3)45 year Data Retention ; (4)NoDelay Writes ; (5)Advanced High-Reliability Ferroelectric Process; (6)Up to 1 MHz maximum bus frequency ; (7)Direct hardware replacement for EEPROM ; (8)Supports legacy timing for 100 kHz & 400 kHz; (9)True 2.7V-3.6V Operation ; (10)70 μA Active Current (100 kHz) ; (11)12 μA Standby Current; (12)Industrial Temperature -40℃ to +85℃; (13)8-pin “Green”/RoHS SOIC Package.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 FM24L256-G |
Ramtron |
F-RAM 256K (32Kx8) 3.3V |
Data Sheet |
Negotiable |
|
||||
|
FM24L256-GTR |
Ramtron |
F-RAM 256K (32Kx8) 3.3V |
Data Sheet |
Negotiable |
|
||||
