(China (Mainland))
Product Summary
The IPP052NE7N3G is an OptiMOS 3 power-transistor.
Parametrics
IPP052NE7N3G absolute maximum ratings: (1)Continuous drain current: 80A; (2)Avalanche energy, single pulse: 370 mJ; (3)Gate source voltage: ±20 V; (4)Power dissipation: 150 W; (5)Operating and storage temperature: -55 to175°C.
Features
IPP052NE7N3G features: (1)Optimized technology for synchronous rectification; (2)Ideal for high frequency switching and DC/DC converters; (3)Excellent gate charge×R DS(on) product (FOM); (4)Very low on-resistance RDS(on); (5)N-channel, normal level; (6)100% avalanche tested; (7)Pb-free plating; RoHS compliant, halogen free.
Diagrams
