FM25CL64B-GTR.

SOIC8, 64Kb FRAM Serial 3V Memory, Software Protection, Low Power Consumption

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Price:: US $1.05~1.15 / piece [Get Latest Price]

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	US $1.05~1.15

PartNumber:: FM25CL64B-GTR.

Brand:: Ramtron International Corporation - RIC | Pack: SOIC | D/C: 11+

Availability:: Supply Ability: 10000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

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Products Upload time: 2011-11-22

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Part Number:FM25CL64B-GTR.
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Product Summary

The FM25CL64B-GTR. is a 64-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile and performs reads and writes like a RAM. The FM25CL64B-GTR. provides reliable data retention for years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories. Unlike serial EEPROMs, the FM25CL64B-GTR. performs write operations at bus speed. No write delays are incurred. The next bus cycle may commence immediately without the need for data polling.

Parametrics

FM25CL64B-GTR. absolute maximum ratings: (1)Power Supply Voltage with respect to VSS:-1.0V to +5.0V ; (2)Voltage on any pin with respect to VSS -1.0V to +5.0V and VIN < VDD+1.0V ; (3)Storage Temperature:-55℃ to + 125℃; (4)Lead Temperature (Soldering, 10 seconds):300℃; (5)Electrostatic Discharge Voltage: Human Body Model(JEDEC Std JESD22-A114-B):4kV, Machine Model(JEDEC Std JESD22-A115-A):300V ; (6)Package Moisture Sensitivity Level:MSL-1.

Features

FM25CL64B-GTR. features: (1)Organized as 8,192 x 8 bits ; (2)Unlimited Read/Write Cycles ; (3)NoDelay Writes ; (4)Advanced High-Reliability Ferroelectric Process ; (5)Up to 16 MHz Frequency ; (6)Direct Hardware Replacement for EEPROM ; (7)SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1) ; (8)Hardware Protection ; (9)Software Protection ; (10)Low Power Consumption ; (11)Low Voltage Operation 3.0V to 3.6V ; (12)15 μA Standby Current ; (13)Automotive Temperature -40℃ to +125℃; (14)“Green”/RoHS 8-pin SOIC .