(China (Mainland))
Product Summary
The BC807-16 is a PNP general purpose transistor. It is in a SOT23 plastic package. The device is designed for general purpose switching and amplification.
Parametrics
BC807-16 absolute maximum ratings: (1)VCBO collector-base voltage: max=-50 V; (2)VCEO collector-emitter voltage: max=-45 V; (3)VEBO emitter-base voltage: max=-5 V; (4)IC collector current (DC): max=-500 mA; (5)ICM peak collector current: max=-1 A; (6)IBM peak base current: max=-200 mA; (7)Ptot total power dissipation Tamb: max=250 mW; (8)Tstg storage temperature: min=-65℃, max=+150 ℃; (9)Tj junction temperature: max=150 ℃; (10)Tamb operating ambient temperature: min=-65℃, max=+150 ℃.
Features
BC807-16 features: (1)High current (max. 500 mA); (2)Low voltage (max. 45 V).
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 BC807-16 |
Taiwan Semiconductor |
Transistors Bipolar (BJT) Transistor 300mW |
Data Sheet |
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BC807-16 /T3 |
NXP Semiconductors |
Transistors Bipolar (BJT) TRANS GP TAPE-13 |
Data Sheet |
Negotiable |
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BC807-16 T/R |
NXP Semiconductors |
Transistors Bipolar (BJT) TRANS GP TAPE-7 |
Data Sheet |
Negotiable |
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BC807-16,215 |
NXP Semiconductors |
Transistors Bipolar (BJT) TRANS GP TAPE-7 |
Data Sheet |
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BC807-16,235 |
NXP Semiconductors |
Transistors Bipolar (BJT) TRANS GP TAPE-13 |
Data Sheet |
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BC807-16-7 |
Diodes Inc. |
Transistors Bipolar (BJT) PNP BIPOLAR |
Data Sheet |
Negotiable |
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BC807-16-7-F |
Diodes Inc. |
Transistors Bipolar (BJT) PNP BIPOLAR |
Data Sheet |
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BC807-16LT1G |
ON Semiconductor |
Transistors Bipolar (BJT) 500mA 50V PNP |
Data Sheet |
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