Product Summary

The IRF9Z24NPBF is a HEXFET power MOSFET. Fifth generation HEXFEfs from international rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Parametrics

IRF9Z24NPBF absolute maximum ratings: (1)soldering temperature, for 10 seconds:300℃;(2)storage temperature range:-55 to 175℃;(3)operating junction temperature range:-55 to 175℃;(4)pulsed drain current:-48A;(5)gate-to-source voltage:±20V;(6)power dissipation:45W.

Features

IRF9Z24NPBF features: (1)advanced process technology; (2)dynamic dv/dt rating; (3)175℃ operating temperature; (4)fast switching; (5)fully avalanche rated; (6)lead-free;(7)P-channel.The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts.The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

Diagrams

IRF9Z24NPBF simpfied diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
IRF9Z24NPBF
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0-1: $1.15
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25-100: $0.49
100-250: $0.46
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