Product Summary
The STF3NK80Z is an N-channel 800V - 3.8Ω- 2.5A TO-220/FP/DPAK/IPAK zener-protected superMESH power MOSFET. The SuperMESH series is obtained through an extreme optimization of ST well established stripbased PowerMESH layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.
Parametrics
STF3NK80Z absolute maximum ratings: (1)Drain-source Voltage (VGS = 0): 800V; (2)Drain-gate Voltage (RGS = 20 kΩ): 800V; (3)Gate- source Voltage: ±30 V; (4)Drain Current (continuous) at TC = 25°C: 2.5A; (5)Drain Current (continuous) at TC = 100°C: 1.57A; (6)Total Dissipation at TC = 25°C: 70W; (7)Gate source ESD(HBM-C=100pF, R=1.5KΩ): 2 KV; (8)Operating Junction Temperature: -55 to 150°C; (9)Storage Temperature: -55 to 150°C.
Features
STF3NK80Z features: (1)typical RDS(on) = 3.8Ω; (2)extremely high dv/dt capability; (3)100% avalanche tested; (4)gate charge minimized; (5)very low intrinsic capacitances; (6)very good manufacturing repeatbility.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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STF3NK80Z |
STMicroelectronics |
MOSFET N-Ch 800 Volt 2.5Amp Zener SuperMESH |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
STF30N65M5 |
STMicroelectronics |
MOSFET POWER MOSFET N-CH 650V |
Data Sheet |
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STF30NM50N |
STMicroelectronics |
MOSFET N-CH 5V 27A MDMESH Power MDmesh |
Data Sheet |
Negotiable |
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STF30NM60N |
STMicroelectronics |
MOSFET N-Ch, 600V-0.1ohms Mdmesh 25A |
Data Sheet |
Negotiable |
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STF30NM60ND |
STMicroelectronics |
MOSFET N-Ch, 600V-0.11ohms FDMesh 25A |
Data Sheet |
Negotiable |
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STF31N65M5 |
STMicroelectronics |
MOSFET N-Ch 650V 0.124 Ohm 22 A MDmesh V |
Data Sheet |
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STF32N65M5 |
STMicroelectronics |
MOSFET POWER MOSFET N-CH 650V |
Data Sheet |
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