STF3NK80Z

STF3NK80Z, TO, N-channel 800V, 3.8W, power MOSFET, ±30 V

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Price:: US $0.31~0.33 / piece [Get Latest Price]

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Qty (lots)	Price/lot
100 ~ 500 :	0.33 / Piece
1000 ~ 5000 :	0.31 / Piece

PartNumber:: STF3NK80Z

Brand:: STMicroelectronics - ST | Pack: TO | D/C: 11+

Availability:: Supply Ability: 50000/Day Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

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Products Upload time: 2013-07-02

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Part Number:STF3NK80Z
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Product Summary

The STF3NK80Z is an N-channel 800V - 3.8Ω- 2.5A TO-220/FP/DPAK/IPAK zener-protected superMESH power MOSFET. The SuperMESH series is obtained through an extreme optimization of ST well established stripbased PowerMESH layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.

Parametrics

STF3NK80Z absolute maximum ratings: (1)Drain-source Voltage (VGS = 0): 800V; (2)Drain-gate Voltage (RGS = 20 kΩ): 800V; (3)Gate- source Voltage: ±30 V; (4)Drain Current (continuous) at TC = 25°C: 2.5A; (5)Drain Current (continuous) at TC = 100°C: 1.57A; (6)Total Dissipation at TC = 25°C: 70W; (7)Gate source ESD(HBM-C=100pF, R=1.5KΩ): 2 KV; (8)Operating Junction Temperature: -55 to 150°C; (9)Storage Temperature: -55 to 150°C.

Features

STF3NK80Z features: (1)typical RDS(on) = 3.8Ω; (2)extremely high dv/dt capability; (3)100% avalanche tested; (4)gate charge minimized; (5)very low intrinsic capacitances; (6)very good manufacturing repeatbility.