SI9945AEY-T1-E3

MOSFET, Dual N-Channel 60-V (D-S), ±20 V, ±3.7 A, 1.7 W, Low Power Dissipation

Rated 5 Rating 5 | reviews | Write a review

Price:: US $0.18~0.19 / piece [Get Latest Price]

Reference price:

Qty (lots)	Price/lot
	US $0.18~0.19

PartNumber:: SI9945AEY-T1-E3

Brand:: Vishay Telefunken - Vishay | Pack: DIP | D/C: 09+

Availability:: Supply Ability: 10000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

Quantity:: piece

Total Price:: US $0

Place Order via Escrow Service

Sold By

Mr. JASON LU's store

(China (Mainland))

add to my favourite

100% Positive feedback

Detailed seller ratings

Visit Store

Contact Now

Esrcow Service

Place orders confidently and securely via it

Safe payments
Quick and easy transactions
Free service charges

Learn More >>

Previous Next

Products Upload time: 2011-09-07

From Other Seller

Part Number:SI9945AEY-T1-E3
US $0.18 - 0.19
74AHC2G08VS SOP-8

US $2.00 - 2.00 / Piece
(0) Remove
YL-G709

US $65.00 - 68.00 / Piece
(0) Remove
Quantity:

piece

Product Summary

The SI9945AEY-T1-E3 is a Dual N-Channel 60-V (D-S), 175℃ MOSFET.

Parametrics

SI9945AEY-T1-E3 absolute maximum ratings: (1)Drain-Source Voltage VDS: 60 V; (2)Gate-Source Voltage VGS: ±20 V; (3)Continuous Drain Current (TJ = 175℃) TA = 25℃ ID: ±3.7 A; TA = 70℃ ID: ±3.2 A; (4)Pulsed Drain Current IDM: 25 A; (5)Continuous Source Current (Diode Conduction) IS: 2 A; (6)Maximum Power Dissipation TA = 25℃ PD: 2.4 W; TA = 70℃ PD: 1.7 W; (7)Operating Junction and Storage Temperature Range TJ, Tstg: –55 to 175 ℃.

Features

SI9945AEY-T1-E3 specifications: (1)Gate Threshold Voltage VGS(th): min=1.0 V; (2)Gate-Body Leakage IGSS: max=±100 nA; (3)Zero Gate Voltage Drain Current IDSS: max=1μA; (4)On-State Drain Current ID(on): min=20 A; (5)Drain-Source On-State Resistance rDS(on): typ=0.06 Ω, max=0.080 Ω; (6)Forward Transconductance gfs: typ=11 S; (7)Diode Forward Voltage VSD: max=1.2 V.