Product Summary

The IRFP250NPBF is an international rectifier. It utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for. The IRFP250NPBF provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Parametrics

IRFP250NPBF absolute maximum ratings: (1)ID @ TC = 25℃ Continuous Drain Current, VGS @ 10V: 30 A; (2)ID @ TC = 100℃ Continuous Drain Current, VGS @ 10V: 21 A; (3)IDM Pulsed Drain Current: 120 A; (4)PD @TC = 25℃ Power Dissipation: 214 W; (5)Linear Derating Factor: 1.4 W/℃; (6)VGS Gate-to-Source Voltage: ±20 V; (7)EAS Single Pulse Avalanche Energy: 315 mJ; (8)IAR Avalanche Current: 30 A; (9)EAR Repetitive Avalanche Energy: 21 mJ; (10)dv/dt Peak Diode Recovery dv/dt: 8.6 V/ns; (11)TJ TSTG Operating Junction and Storage Temperature Range: -55 to +175 ℃.

Features

IRFP250NPBF features: (1)Advanced Process Technology; (2)Dynamic dv/dt Rating; (3)175℃ Operating Temperature; (4)Fast Switching; (5)Fully Avalanche Rated; (6)Ease of Paralleling; (7)Simple Drive Requirements; (8)Lead-Free.

Diagrams

IRFP250NPBF test circuit

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
IRFP250NPBF
IRFP250NPBF

International Rectifier

MOSFET MOSFT 200V 30A 75mOhm 82nCAC

Data Sheet

0-1: $1.68
1-25: $1.09
25-100: $0.79
100-250: $0.74
Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
IRFP044
IRFP044

Vishay/Siliconix

MOSFET N-Chan 60V 57 Amp

Data Sheet

Negotiable 
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IRFP044, SiHFP044

Other


Data Sheet

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Data Sheet

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IRFP044NPBF

International Rectifier

MOSFET MOSFT 55V 49A 20mOhm 40.7nCAC

Data Sheet

0-1: $1.21
1-25: $0.79
25-100: $0.57
100-250: $0.53
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IRFP044PBF

Vishay/Siliconix

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Data Sheet

Negotiable 
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Vishay/Siliconix

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Data Sheet

0-331: $3.92
331-500: $3.60
500-1000: $3.46
1000-2000: $3.37