Product Summary

The FDS8958A-NL is a dual N- and P-Channel enhancement mode power field effect transistor. It is produced using the advanced PowerTrench process of Fairchild Semiconductor that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance. These FDS8958A-NL is well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

Parametrics

FDS8958A-NL absolute maximum ratings: (1)VDSS Drain-Source Voltage: 30 V; (2)VGSS Gate-Source Voltage: ±20 V; (3)ID Drain Current - Continuous: 7 A; Pulsed: 20A; (4)PD Power Dissipation for Dual Operation: 2 W; Power Dissipation for Single Operation 1.6 W; (5)TJ, TSTG Operating and Storage Junction Temperature Range: -55 to +150 ℃.

Features

FDS8958A-NL features: (1)Q1: N-Channel 7.0A, 30V RDS(on) = 0.028Ω@ VGS = 10V; RDS(on) = 0.040Ω@ VGS = 4.5V; (2)Q2: P-Channel -5A, -30V RDS(on) = 0.052Ω@ VGS = -10V; RDS(on) = 0.080Ω@ VGS = -4.5V; (3)Fast switching speed; (4)High power and handling capability in a widely used surface mount package.

Diagrams

FDS8958A-NL diagram

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100-250: $0.79
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1-25: $0.71
25-100: $0.66
100-250: $0.57