BPW77NB

silicon NPN phototransistor, TO-18, 80 V, 100 mA, High photo sensitivity, Fast response times

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Price:: US $1.50~1.60 / piece [Get Latest Price]

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	US $1.50~1.60

PartNumber:: BPW77NB

Brand:: Vishay Telefunken - Vishay | Pack: DIP | D/C: 04+

Availability:: Supply Ability: 10000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

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Products Upload time: 2011-09-07

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Part Number:BPW77NB
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Product Summary

The BPW77NB is a silicon NPN phototransistor with high radiant sensitivity in hermetically sealed TO-18 package with base terminal and glass lens. It is sensitive to visible and near infrared radiation. The BPW77NB is suitable for Detector in electronic control and drive circuits.

Parametrics

BPW77NB absolute maximum ratings: (1)Collector base voltage, VCBO: 80 V; (2)Collector emitter voltage, VCEO: 70 V; (3)Emitter base voltage, VEBO: 5 V; (4)Collector current, IC: 50 mA; (5)Collector peak curren, ICM: 100 mA; (6)Total power dissipation, PV: 250 mW; (7)Junction temperature, Tj: 125℃; (8)Operating temperature range, Tamb: - 40 to + 125℃; (9)Storage temperature range, Tstg: - 40 to + 125℃; (10)Soldering temperature, Tsd: 260℃; (11)Thermal resistance junction/ambient, RthJA: 400 K/W; (12)Thermal resistance junction/gase, RthJC: 150 K/W.

Features

BPW77NB features: (1)Package type: leaded; (2)Package form: TO-18; (3)Dimensions (in mm): Φ 4.7; (4)High photo sensitivity; (5)High radiant sensitivity; (6)Suitable for visible and near infrared radiation; (7)Fast response times; (8)Angle of half sensitivity:Φ =±10°; (9)Base terminal connected; (10)Hermetically sealed package; (11)Lead (Pb)-free component in accordance with RoHS 2002/95/EC and WEEE 2002/96/EC.