(China (Mainland))
Product Summary
Features<br />
? Max. clock 10 MHz<br />
? Low-power CMOS technology<br />
- Max. Write Current: 5 mA at 5.5V, 10 MHz<br />
- Read Current: 5 mA at 5.5V, 10 MHz<br />
- Standby Current: 1 μA at 5.5V<br />
? 32,768 x 8-bit organization<br />
? 64 byte page<br />
? Self-timed ERASE and WRITE cycles (5 ms <br />
max.)<br />
? Block write protection<br />
- Protect none, 1/4, 1/2 or all of array<br />
? Built-in write protection<br />
- Power-on/off data protection circuitry<br />
- Write enable latch<br />
- Write-protect pin<br />
? Sequential read<br />
? High reliability<br />
- Endurance: 1,000,000 erase/write cycles<br />
- Data retention: > 200 years<br />
- ESD protection: > 4000V<br />
? Temperature ranges supported;<br />
? Standard and Pb-free packages available
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 25LC256-I/SN |
Microchip Technology |
EEPROM 32kx8 - 2.5V |
Data Sheet |
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|
25LC256-I/SNG |
Microchip Technology |
EEPROM 32kx8 - 2.5V Lead Free Package |
Data Sheet |
Negotiable |
|
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