Product Summary

The STS4DNF60L is a POWER MOSFET. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. The applications of the STS4DNF60L include: (1)dc motor drive; (2)dc-dc converters; (3)battery managment in nomadic equipment; (4)power managment in portable/desktop pcs.

Parametrics

STS4DNF60L absolute maximum ratings: (1)VDS Drain-source Voltage (VGS = 0): 60 V; (2)VDGR Drain- gate Voltage (RGS = 20 kΩ): 60 V; (3)VGS Gate-source Voltage: ± 20 V; (4)ID Drain Current (continuous) at Tc = 25 ℃ Single Operation: 4 A; Drain Current (continuous) at Tc = 100 ℃ Single Operation: 2.5 A; (5)IDM Drain Current (pulsed): 16 A; (6)Ptot Total Dissipation at Tc = 25 ℃ Dual Operation: 2W; Total Dissipation at Tc = 25 ℃ Single Operation: 1.6 W.

Features

STS4DNF60L features: (1)typical rds(on) = 0.045 Ω; (2)standard outline for easy automated surface mount assembly; (3)low threshold drive.

Diagrams

STS4DNF60L internal schematic diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
STS4DNF60L
STS4DNF60L
STMicroelectronics
MOSFET N-Ch 60 Volt 4 Amp
Data Sheet
0-1: $1.02
1-10: $0.82
10-100: $0.74
100-250: $0.61
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(USD)		 Quantity
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0-1: $0.60
1-10: $0.46
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100-250: $0.35
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Data Sheet
Negotiable