Product Summary

The MG75Q2YS40 is a silicon N channel IGBT. The MG75Q2YS40 has high power switching applications and motor control applications.

Parametrics

MG75Q2YS40 absolute maximum ratings: (1)Collector-emitter voltage: 1200 V; (2)Gate-emitter voltage: ±20 V ; (3)Collector current: 75A; (4)Forward current: 150A; (5)Collector power dissipation(Tc = 25°C):560 W; (6)Junction temperature: 150°C; (7)Storage temperature range: -40 to 125 °C; (8)Isolation voltage: 2500V; (9)Screw torque (Terminal / mounting): 3 / 3 N·m.

Features

MG75Q2YS40 features: (1)High input impedance ; (2)High speed : tf = 0.5μs (Max); (3)Low saturation voltage, VCE(sat) = 4.0V (Max); (4)Enhancement-mode; (5)Includes a complete half bridge in one package.; (6)The electrodes are isolated from case.

Diagrams

MG75Q2YS40 pin connection