(China (Mainland))
Product Summary
The IS41LV16100-60T is a 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memory. The IS41LV16100-60T offers an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes the IS41LV16100-60T ideal for use in 16-bit and 32-bit wide data bus systems.
Parametrics
IS41LV16100-60T absolute maximum ratings: (1)Voltage on Any Pin Relative to GND(5V): –1.0 to +7.0 V; (2)Supply Voltage(5V): –1.0 to +7.0 V; (3)Output Current: 50 mA; (4)Power Dissipation: 1W; (5)Commercial Operation Temperature: 0 to +70°C; (6)Storage Temperature: –55 to +125°C.
Features
IS41LV16100-60T features: (1)TTL compatible inputs and outputs; tristate I/O; (2)JEDEC standard pinout; (3)Single power supply: — 5V ± 10% (IS41C16100); (4)Industrail Temperature Range: -40 to 85°C.
Diagrams
