IRFP2907PBF

Power MOSFET, 209A, ±20 V, Advanced Process Technology, Fast Switching, Lead-Free

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Price:: US $4.00~4.20 / piece [Get Latest Price]

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	US $4.00~4.20

PartNumber:: IRFP2907PBF

Brand:: International Rectifier - IR | Pack: DIP | D/C: 09+

Availability:: Supply Ability: 10000/Week Can Ship Immediately
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Products Upload time: 2011-09-07

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Part Number:IRFP2907PBF
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Product Summary

The IRFP2907PBF is a Power MOSFET. It is suitable for Telecom applications requiring soft start. The IRFP2907PBF utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET IRFP2907PBF are a 175℃ junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.

Parametrics

IRFP2907PBF absolute maximum ratings: (1)ID @ TC = 25℃, Continuous Drain Current, VGS @ 10V: 209A; (2)ID @ TC = 100℃, Continuous Drain Current, VGS @ 10V: 148A; (3)IDM, Pulsed Drain Current: 840A; (4)PD @TC = 25℃, Power Dissipation: 470 W; (5)Linear Derating Factor: 3.1 W/℃; (6)VGS, Gate-to-Source Voltage: ±20 V; (7)EAS, Single Pulse Avalanche Energy: 1970 mJ; (8)dv/dt, Peak Diode Recovery dv/dt: 5.0 V/ns; (9)TJ, TSTG,Operating Junction and Storage Temperature Range: -55 to + 175℃; (10)Soldering Temperature, for 10 seconds: 300℃ (1.6mm from case).

Features

IRFP2907PBF features: (1)Advanced Process Technology; (2)Ultra Low On-Resistance; (3)Dynamic dv/dt Rating; (4)175℃ Operating Temperature; (5)Fast Switching; (6)Repetitive Avalanche Allowed up to Tjmax; (7)Lead-Free.