(China (Mainland))
Product Summary
The FM28V100-TG is a 128K × 8 nonvolatile memory that reads and writes like a standard SRAM. A ferroelectric random access memory or F-RAM is nonvolatile, which means that data is retained after power is removed. The FM28V100-TG provides data retention for over 10 years while eliminating the reliability concerns, functional disadvantages, and system design complexities of battery-backed SRAM (BBSRAM). Fast write timing and very high write endurance make F-RAM superior to other types of memory. In-system operation of the FM28V100-TG is very similar to other RAM devices and can be used as a drop-in replacement for standard SRAM.
Parametrics
FM28V100-TG absolute maximum ratings: (1)VDD Power Supply Voltage with respect to VSS: -1.0V to +4.5V; (2)VIN Voltage on any signal pin with respect to VSS: -1.0V to +4.5V and VIN < VDD+1V; (3)TSTG Storage Temperature: -55℃ to +125℃; (4)TLEAD Lead Temperature (Soldering, 10 seconds): 300℃; (5)VESD Electrostatic Discharge Voltage - Human Body Model (JEDEC Std JESD22-A114-B): 2kV; - Charged Device Model (JEDEC Std JESD22-C101-A): 1.25kV; - Machine Model (JEDEC Std JESD22-A115-A): 200V; (6)Package Moisture Sensitivity Level: MSL-2.
Features
FM28V100-TG features: (1)1Mbit Ferroelectric Nonvolatile RAM: Organized as 128Kx8; High Endurance 100 Trillion (1014) Read/Writes; NoDelay Writes; Page Mode Operation to 33MHz; Advanced High-Reliability Ferroelectric Process; (2)Superior to Battery-backed SRAM Modules: No battery concerns; Monolithic reliability; True surface mount solution, no rework steps; Superior for moisture, shock, and vibration.
Diagrams
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 FM28V100-TG |
Ramtron |
F-RAM 1M (128Kx8) 2.2-3.6V F-RAM |
Data Sheet |
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FM28V100-TGTR |
Ramtron |
F-RAM 1M (128Kx8) 2.2-3.6V F-RAM |
Data Sheet |
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