Product Summary
The IRFP4668PBF is a HEXFET Power MOSFET. The IRFP4668PBF can be applied inhigh efficiency synchronous, rectification in SMPS, uninterruptible power supply and high speed power switching, and hard switched and high frequency circuits.
Parametrics
IRFP4668PBF absolute maximum ratings: (1)Continuous Drain Current: 130A; (2)Maximum Power Dissipation: 520W; (3)Linear Derating Factor: 3.5 W/°C; (4)Gate-to-Source Voltage: ± 30V; (5)Operating Junction and Storage Temperature Range: -55 to + 175°C; (6)Soldering Temperature, for 10 seconds: 300.
Features
IRFP4668PBF features: (1)Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; (2)Fully Characterized Capacitance and Avalanche SOA; (3)Enhanced body diode dV/dt and dI/dt Capability; (4)Lead-Free.
Diagrams
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![]() IRFP4668PBF |
![]() International Rectifier |
![]() MOSFET MOSFT 200V 130A 2.6mOhm 161nC Qg |
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