(China (Mainland))
Product Summary
The FZT653TA is a high performance transistor.
Parametrics
FZT653TA absolute maximum ratings: (1)Collector-Base Voltage VCBO: 120 V; (2)Collector-Emitter Voltage VCEO: 100 V; (3)Emitter-Base Voltage VEBO: 5 V; (4)Peak Pulse Current ICM: 6 A; (5)Continuous Collector Current IC: 2 A; (6)Power Dissipation at Tamb =25℃ Ptot: 2 W; (7)Operating and Storage Temperature Range Tj, Tstg: -55 to +150 ℃.
Features
FZT653TA features: Low saturation voltage.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
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 FZT653TA |
Diodes Inc. |
Transistors Bipolar (BJT) NPN Medium Power |
Data Sheet |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||||
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FZT653TA |
Diodes Inc. |
Transistors Bipolar (BJT) NPN Medium Power |
Data Sheet |
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Data Sheet |
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