(China (Mainland))
Product Summary
The BSZ065N03LS 30V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate- and output charges together with lowest on state resistance in small footprint packages make BSZ065N03LS 30V the best choice for the demanding requirements of voltage regulator solutions in Servers, Datacom and Telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in.
Parametrics
BSZ065N03LS absolute maximum ratings: (1)Continuous drain current: Max. 40 A; (2)Pulsed drain current: 160A; (3)Gate source voltage: 20V; (4)Power dissipation: 26 W; (5)Operating and storage temperature: -55 to 150°C.
Features
BSZ065N03LS features: (1)Optimized for high performance buck converters (Server, VGA); (2)100% avalanche tested; (3)N-channel; (4)Superior thermal resistance; (5)Pb-free plating; RoHS compliant; (6)Halogen-free according to IEC61249-2-21.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 BSZ065N03LS |
Infineon Technologies |
MOSFET N-KAN |
Data Sheet |
|
|
||||||||||||||||||||
| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||||||||||||
 |
BSZ018NE2LS |
Infineon Technologies |
MOSFET N-KAN |
Data Sheet |
|
|
||||||||||||||||||||
|
BSZ018NE2LSI |
|
MOSFET N-CH 25V 22A TSDSON-8 |
Data Sheet |
|
|
||||||||||||||||||||
|
BSZ023N04LS |
Infineon Technologies |
MOSFET 40V S308 |
Data Sheet |
Negotiable |
|
||||||||||||||||||||
|
BSZ023N04LSATMA1 |
Infineon Technologies |
MOSFET MV POWER MOS |
Data Sheet |
|
|
||||||||||||||||||||
|
BSZ033N03MSC G |
Infineon Technologies |
MOSFET N-KANAL POWER MOS |
Data Sheet |
|
|
||||||||||||||||||||
 |
BSZ035N03LS G |
Infineon Technologies |
MOSFET 30.0V3.5mOhm 5.7mOhm N CHANNEL MOSFET |
Data Sheet |
|
|
||||||||||||||||||||
