(China (Mainland))
Product Summary
The SI4532ADY-T1-E3 is an N- and P-channel 30-V (D-S) mosfet. The attached spice model describes the typical electrical characteristics of the n- and p-channel vertical DMOS. The subcircuit model is extracted and optimized over the -55 to 125°C temperature ranges under the pulsed 0 to 10V gate drive. The saturated output impedance is best fit at the gate bias near the threshold voltage.
Parametrics
SI4532ADY-T1-E3 absolute maximum ratings: (1)gate threshold voltage: 1.8V; (2)drain-source on-state resistance: VGS = 10 V, ID = 4.9 A N-Ch 0.044Ω; (3)forward transconductance: VDS = 15 V, ID = 4.9 A N-Ch 11S; (4)diode forward voltage: IS = 1.7 A, VGS = 0 V N-Ch 0.80V.
Features
SI4532ADY-T1-E3 features: (1)N- and P-Channel Vertical DMOS; (2)Macro Model (Subcircuit Model); (3)Level 3 MOS; (4)Apply for both Linear and Switching Application; (5)Accurate over the -55 to 125°C Temperature Range; (6)Model the Gate Charge, Transient, and Diode Reverse Recovery Characteristics.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 SI4532ADY-T1-E3 |
Vishay/Siliconix |
MOSFET 30V 4.9/3.9A 2W |
Data Sheet |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||||
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SI4500BDY-T1-E3 |
Vishay/Siliconix |
MOSFET 20V 7/4.5A 2.5W |
Data Sheet |
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SI4500DY |
Vishay/Siliconix |
MOSFET 20V 7/4.5A 2.5W |
Data Sheet |
Negotiable |
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SI4500DY-T1 |
Vishay/Siliconix |
MOSFET 20V 7/4.5A 2.5W |
Data Sheet |
Negotiable |
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SI4501ADY-T1-GE3 |
Vishay/Siliconix |
MOSFET 30/8.0V 8.8/5.7A 18/42mohm @ 10/4.5V |
Data Sheet |
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SI4532ADY-T1-E3 |
Vishay/Siliconix |
MOSFET 30V 4.9/3.9A 2W |
Data Sheet |
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SI4501DY-T1-E3 |
Vishay/Siliconix |
MOSFET 30/8 9/6.2A |
Data Sheet |
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