SI4532ADY-T1-E3

SI4532ADY-T1-E3, SOP, N-and P-channel 30-V (D-S) mosfet, 1.8V, 0.044Ω

Rated 5 Rating 5 | reviews | Write a review

Price:: US $0.18~0.20 / piece [Get Latest Price]

Reference price:

Qty (lots)	Price/lot
100 ~ 1000 :	0.20 / Piece
1000 ~ 5000 :	0.18 / Piece

PartNumber:: SI4532ADY-T1-E3

Brand:: Vishay Telefunken - Vishay | Pack: SOP | D/C: 12+

Availability:: Supply Ability: 50000/Day Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

Quantity:: piece

Total Price:: US $0

Place Order via Escrow Service

Not exactly what you want? Post a quick Buying Request!

Sold By

Mr. JASON LU's store

(China (Mainland))

100% Positive feedback

Detailed seller ratings

Visit Store

Contact Now

Esrcow Service

Place orders confidently and securely via it

Safe payments
Quick and easy transactions
Free service charges

Learn More >>

Previous Next

Products Upload time: 2013-07-02

From Other Seller

Part Number:SI4532ADY-T1-E3
US $0.18 - 0.20
Quantity:

piece

Product Summary

The SI4532ADY-T1-E3 is an N- and P-channel 30-V (D-S) mosfet. The attached spice model describes the typical electrical characteristics of the n- and p-channel vertical DMOS. The subcircuit model is extracted and optimized over the -55 to 125°C temperature ranges under the pulsed 0 to 10V gate drive. The saturated output impedance is best fit at the gate bias near the threshold voltage.

Parametrics

SI4532ADY-T1-E3 absolute maximum ratings: (1)gate threshold voltage: 1.8V; (2)drain-source on-state resistance: VGS = 10 V, ID = 4.9 A N-Ch 0.044Ω; (3)forward transconductance: VDS = 15 V, ID = 4.9 A N-Ch 11S; (4)diode forward voltage: IS = 1.7 A, VGS = 0 V N-Ch 0.80V.

Features

SI4532ADY-T1-E3 features: (1)N- and P-Channel Vertical DMOS; (2)Macro Model (Subcircuit Model); (3)Level 3 MOS; (4)Apply for both Linear and Switching Application; (5)Accurate over the -55 to 125°C Temperature Range; (6)Model the Gate Charge, Transient, and Diode Reverse Recovery Characteristics.